MBRA130LT3 |
RFQ for MBRA130LT3 Required Field |
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| Technical/Catalog Information | MBRA130LT3 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 410mV @ 1A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 30V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MBRA130LT3 MBRA130LT3 MBRA130LT3OSTR ND MBRA130LT3OSTRND MBRA130LT3OSTR |
| Product | Manufacturers | Pack | D/C |
| MBRA130LT3 | - | SMA | 96+ |
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
30 | V |
| Average Rectified Forward Current (At Rated VR, TC = 105°C) |
IO | 1.0 |
A |
| Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) |
IFRM | 2.0 | A |
| Non-Repetitive Peak Surge Current (Surge applied at rated load conditions,halfwave,single phase, 60Hz) |
IFSM | 25 | A |
| Storage/Operating Case Temperature | Tstg,TC | –55 to +175 | ℃ |
| POperating Junction Temperature | TJ | –55 to +125 | ℃ |
| Voltage Rate of Change (Rated VR TJ = 25°C) | dv/dt | 10,000 | V/μs |
| Models | MFG | Pack |
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| MBR0520\2B | ||
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| MBR0520LT1 | ||
| MBR0520LT1 / B2 | ||
| MBR0520LT1 /B2 | ||
| MBR0520LT1/B2Y | ||
| MBR0520LT1G | ||
| MBR0520LT3 | SOD-123 | |
| MBR0520LT3G | ||
| MBR0520-T | ||
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| MBR052LT3 | ||
| MBR0530 | ON Semiconductor | |
| MBR0530LT1 | ||
| MBR0530LT1G | ||
| MBR0530PBF | ||
| MBR0530T | ||
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| MBR0530T1 | ||
| MBR0530T1 / B3P | ||
| MBR0530T1/B3 | ||
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| MBR0540 | ON Semiconductor |
